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By Joseph S. Heyman

This ebook examines electronics reliability and dimension know-how. It identifies advances in size technological know-how and know-how for nondestructive assessment, and it info universal size hassle spots.

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Schauerte and Mr. J. Biafora of the General Motors Research Laboratories, Warren, Michigan for their assistance in making masks and ion-implanting samples. REFERENCES [I] L, A. Murray and N. Goldsmith, “Nondestructive Determination of Thickness and Perfection of Silica Films,” /. Elecfrochem. , vol. 113, no. 12, pp. 12Q7-1306, December 1966. [2] L. Jastrzeske, J. Lagowski, and H. C. Gatos, “Quantitative Dekrmination of the Carrier Concentration Distribution in Semiconductors by Scanning IR Absorption: Si,” 1.

On the other hand, this type of array is being considered to be used for laser-based infrared analysis. For example, using a CO, laser as a radiation source and measuring infrared absorption or reflection, film thickness or carrier concentration profiles throughout a wafer could be evaluated [6]. As a conclusion, a monolithic thermopile infrared detector array has been developed using conventional MOS technology and micromachining, and this type of array bar a potential to be used for an inexpensive non-contact in situ process evaluation system.

By the end of the fourth workshop in 1985, it is clear that these ideas not only apply to process/product development, but are critically and economically important in high volume manufacturing. Can these wafer level reliability tests be There are still issues to be resolved. Do both of these tests correcorrelated to traditional packaged reliability tests? late to field reliability in VLSI devices? These questions must be addressed for The data reported at the 1985 workshop show that wafer level each failure mechanism.

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