By Takayasu Sakurai
Fully-depleted SOI CMOS Circuits and expertise for Ultralow-Power functions addresses the matter of decreasing the provision voltage of traditional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit layout for FD-SOI units at a offer voltage of 1/2 V. the subjects comprise the minimal required wisdom of the fabrication of SOI substrates; FD-SOI units and the newest advancements in equipment and procedure applied sciences; and ultralow-voltage circuits, equivalent to electronic circuits, analog/RF circuits, and DC-DC converters. every one ultra-low-power strategy on the topic of units and circuits is totally defined utilizing figures to aid figuring out.
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Additional resources for Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications
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As more and more accumulate, the body potential increases and the barrier height decreases, which allows more holes to flow out to the source across the barrier. Consequently, the number of holes that can accumulate in the body region is such that the number flowing out to the source balances the number generated by impact ionization. 5000/div(V) (b) Fig. 6 Drain current-voltage characteristics of (a) FD-SOI and (b) PD-SOI nMOSFETs. (From J. P. 2]. ) 32 Since a PD-SOI device has a higher potential barrier to holes than an FD-SOI device does, it allows more holes accumulate in the body region.