By Kevin F. Brennan
Preface; checklist of actual constants; record of fabrics parameters for very important semiconductors, Si, and GaAs; 1. Semiconductor basics; 2. service motion; three. Junctions; four. Bipolar junction transistors; five. JFETs and MESFETs; 6. Metal-insulator-semiconductor buildings and MOSFETs; 7. brief channel results and demanding situations to CMOS; eight. past CMOS; nine. Telecommunications structures - an outline; 10. Optoelectronic units - emitters, mild amplifiers and detectors; eleven. Transistors for prime frequency, excessive strength amplifiers for instant structures; References; Index
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Extra resources for Introduction to semiconductor devices : for computing and telecommunications applications
5. 23) is consistent with Maxwell’s equations. This can be shown as follows. Recall that in electromagnetics the normal component of the D ﬁeld is continuous across a boundary provided that there is no surface charge concentration. 28) implies that the amount of space charge uncovered on the n-side is equal to the amount of space charge uncovered on the p-side. This is necessary in order to maintain charge balance in the semiconductor. Notice that if the doping concentration on one side is far larger than that on the other side most of the depletion region width resides on the lower doped side.
3 (a) Show that the minimum conductivity of a semiconductor sample occurs when n0 = ni µp µn (b) What is the expression for the minimum conductivity, σmin ? (c) Calculate σmin for Si at 300 K and compare with the intrinsic conductivity. 0 × 1010 cm−3 . 5 An intrinsic semiconductor sample has a resistance of 5 at 360 K and a resistance of 50 at 330 K. Assume that the only factor that changes the resistance between the two cases is the change in the intrinsic carrier concentration. Determine an expression relating the energy gaps at 360 K and 330 K.
Instead, the electron behaves within the crystal as if it has a different mass, called the reduced mass. The reduced mass arises from the motion of the electrons in the periodic potential of the ions forming the crystalline lattice. 6 Sketch of (a) the conduction band and (b) the valence band showing the direction of increasing electron and hole energy. 17) apply for the electron and hole concentrations for a semiconductor in equilibrium. An intrinsic semiconductor has no intentionally added impurities.