Download Microelectronics Processing: Inorganic Materials by Lawrence Casper PDF

By Lawrence Casper

content material: Analytical techniques and specialist platforms within the characterization of microelectronic units / D.E. Passoja, Lawrence A. Casper, and A.J. Scharman --
electric characterization of semiconductor fabrics and units / Dieter okay. Schroder --
Dopant profiles by means of the spreading resistance approach / Robert G. Mazur --
Scanning electron microscopic options for characterization of semiconductor fabrics / Rodney A. younger and Ronald V. Kalin --
Semiconductor fabrics illness diagnostics for submicrometer very huge scale integration expertise / G.A. Rozgonyi and D.K. Sadana --
purposes of secondary ion mass spectroscopy to characterization of microelectronic fabrics / Mary Ryan-Hotchkiss --
functions of Auger electron spectroscopy in microelectronics / Paul A. Lindfors, Ronald W. Kee, and Douglas L. Jones --
X-ray photoelectron spectroscopy utilized to microelectronic fabrics / William F. Stickle and Kenneth D. Bomben --
software of neutron intensity profiling to microelectronic fabrics processing / R.G. Downing, J.T. Maki, and R.F. Fleming --
Thermal-wave size of thin-film thickness / Allan Rosencwaig --
Characterization of fabrics, skinny movies, and interfaces through optical reflectance and ellipsometric ideas / D.E. Aspnes --
size of the oxygen and carbon content material of silicon wafers by means of Fourier rework IR spectrophotometry / Aslan Baghdadi --
program of the Raman microprobe to analytical difficulties of microelectronics / Fran Adar --
Characterization of gallium arsenide by means of magneto-optical photoluminescent spectroscopy / D.C. Reynolds --
Thermal-wave imaging in a scanning electron microscope / Allan Rosencwaig --
Fourier remodel mass spectrometry within the microelectronics carrier laboratory / W.H. Penzel --
fabrics characterization utilizing elemental and isotopic analyses by means of inductively coupled plasma mass spectrometry / B. Shushan, E.S.K. Quan, A. Boorn, D.J. Douglas, and G. Rosenblatt --
Activation research of electronics fabrics / Richard M. Lindstrom --
hint point survey analyses by way of spark resource mass spectrography / Fredric D. Leipziger and Richard J. Guidoboni --
Characterization of elements in plasma phosphorus-doped oxides / Jana Houskova, Kim-Khanh N. Ho, and Marjorie okay. Balazs --
method regulate of vacuum-deposited nickel-chromium for the fabrication of reproducible thin-film resistors / Vineet S. Dharmadhikari --
Characterization of spin-on glass movies as a planarizing dielectric / Satish okay. Gupta and Roland L. Chin --
results of assorted chemistries on silicon-wafer cleansing / D. Scott Becker, William R. Schmidt, Charlie A. Peterson, and Don C. Burkman --
tracking of debris in gases with a laser counter / C.E. Nowakowski and J.V. Martinez de Pinillos --
Microelectronics processing challenge fixing : the synergism of complementary options / J.N. Ramsey.

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Extra resources for Microelectronics Processing: Inorganic Materials Characterization

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S. Personal Communication. 4. S. "Semiconductor Statistics"; Pergamon Press: New York, 1962; p. 122. 5. T. IEEE Trans. 1971, ED-18, 965-973. 6. R "MOS Physics and Technology"; Wiley: New York, 1982 7. ; Faktor 328. 8. G. This Volume. 9. F. "Semiconductor Processing"; ASTM: Philadelphia, 1984; pp. 409-425. 10. O. Appl. Phys. Lett. 1975, 27, 353-355. 11. M. Phys. Stat. , 1977, 39a, 11-39. 12. K. IEEE Trans. 1982, ED-29, 1336-1338. 13. R. "Semiconductor Measurements and Instrumentation"; McGraw-Hill: New York, 1975; pp.

This i sf u r t h e r aggravated i f , f o r e x a m p l e , t h e i o n - i m p l a n t e d l a y e r i s not w h o l l y a c t i v a t e d o r i f t h e r e i s a steep doping g r a d i e n t . I t i s i m p o r t a n t t h a t one i s a w a r e o f these d i f f i c u l t i e s . Various techniques are used f o r t h e s e measurements. The most p o p u l a r a r e c a p a c i t a n c e - v o l t a g e (C-V) p r o f i l i n g , s p r e a d i n g r e s i s t a n c e and secondary i o n mass s p e c t r o s c o p y ( S I M S ) .

T h i s d i s c u s s i o n of the m e c h a n i c a l and e l e c t r i c a l p r o p e r t i e s o f s p r e a d i n g r e s i s t a n c e c o n t a c t s makes i t c l e a r t h a t the probes used d i f f e r from any o t h e r s p r e v i o u s l y used i n e i t h e r p o i n t - c o n t a c t d i o d e work o r i n semiconductor e l e c t r i c a l measurements. System E l e c t r o n i c s . I n a d d i t i o n t o u s i n g s p e c i a l i z e d c o n t a c t s and mechanical apparatus, spreading r e s i s t a n c e p r o f i l i n g a l s o r e q u i r e s s p e c i a l i z e d e l e c t r o n i c s .

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