By F. F. Mazda
A guide and is the reason various features of energy electronics, together with the parts, circuits and functions
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Extra info for Power Electronics Handbook. Components, Circuits and Applications
34. Once again it is possible to swamp the inequality of the device voltage drops by series-connected impedances, such as inductors or resistors, or by current-sharing reactors. Inductances are effective only during transient conditions, when the current is changing. Current-sharing reactors, where the imbalance in different parts of the reactor forces equal current flow in the various parallel arms, are expensive and bulky. Resistors are cheaper, but dissipate power. 35 shows two thyristors connected in parallel with sharing resistors.
13 Power bipolar transistor characteristic: (a) second breakdown characteristic; (b) safe operating area increase as the collector-emitter voltage (VCE) increases. After a point A on the characteristic the device will go into saturation and the current will remain substantially constant until point B, when avalanche breakdown, or first breakdown, occurs. This causes a rapid rise in current until point C when a second breakdown effect develops. This results in rapid local heating of the silicon die, the collector-emitter voltage collapses, and the current escalates, destroying the transistor.
As the duty cycle of the transistor decreases it runs cooler so that it can work on a wider second breakdown locus. 30 Power semiconductor devices Power transistors must be operated in a mode such that second breakdown is avoided. 13(b). Although these curves are for a device rated at a peak current of IM and a voltage of V M , the transistor cannot be run at this current and voltage simultaneously. For low values of VCB the current can increase to 7 M , where it is limited by the current-carrying capability of the bonding wire and the metallisation tracks used on the silicon.